MOSFET N-CH
| Part | Vgs (Max) | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | FET Type | Technology | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | ||||||||||||||||
Alpha & Omega Semiconductor Inc. | 20 V | 2.5 W 53 W | 4.5 V 10 V | TO-252 (DPAK) | N-Channel | MOSFET (Metal Oxide) | 2.4 V | 1500 pF | 30 V | Surface Mount | 17 A 46 A | 18 nC | 5.2 mOhm | -55 °C | 175 ░C | DPAK (2 Leads + Tab) SC-63 TO-252-3 |