Beta
⌘K
DIODE SIL CARB 650V 1A DO214AA
| Part | Current - Average Rectified (Io) | Capacitance @ Vr, F | Mounting Type | Technology | Supplier Device Package | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) [Max] | Reverse Recovery Time (trr) | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Speed | Voltage - Forward (Vf) (Max) @ If | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 1 A | 76 pF | Surface Mount | SiC (Silicon Carbide) Schottky | DO-214AA | 10 µA | 650 V | 0 ns | 175 ░C | -55 C | No Recovery Time | 2 V | DO-214AA SMB |