SCH2825 Series

N-Channel Power MOSFET 30V, 1.6A, 180mΩ, Single SCH6 with Schottky Diode

Catalog

N-Channel Power MOSFET 30V, 1.6A, 180mΩ, Single SCH6 with Schottky Diode

Part	Gate Charge (Qg) (Max) @ Vgs	FET Feature	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Technology	Rds On (Max) @ Id, Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor SCH2825-TL-E	2 nC	Schottky Diode (Isolated)	1.6 A	600 mW	6-SCH	30 V	Surface Mount	6-SMD Flat Leads	125 ¯C	-55 °C	4 V	10 V	N-Channel	MOSFET (Metal Oxide)	180 mOhm	20 V	88 pF

N-Channel Power MOSFET 30V, 1.6A, 180mΩ, Single SCH6 with Schottky Diode

• Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one packagefacilitating high-density mounting

• MOSFET : Low ON-resistance, Ultrahigh-speed swithing, 4V drive.

• SBD : Shot reverse recovery time, Low forward voltage.

SCH2825 is an N-Channel Power MOSFET 30V, 1.6A, 180mΩ, Single SCH6 with Schottky Diode for General-Purpose Switching Device Applications.