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MOSFET N-CH 40V 120A DPAK
| Part | Technology | Power Dissipation (Max) | Vgs (Max) | FET Type | Package / Case | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Operating Temperature | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | 180 W | 20 V | N-Channel | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 1.9 mOhm | 120 A | 5500 pF | 103 nC | DPAK+ | 175 °C | 40 V | 6 V 10 V | Surface Mount | 3 V |