DIODE MODULE GP 1.2KV 3TOWER
| Part | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] | Voltage - Forward (Vf) (Max) @ If | Supplier Device Package | Diode Configuration | Mounting Type | Current - Average Rectified (Io) (per Diode) | Current - Reverse Leakage @ Vr | Speed | Speed | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Three Tower | 1.2 kV | 1.2 V | Three Tower | 1 Pair Series Connection | Chassis Mount | 300 A | 25 µA | Standard Recovery >500ns | 200 mA | 150 °C | -55 °C | Standard |
GeneSiC Semiconductor | Three Tower | 1000 V | 1.1 V | Three Tower | 1 Pair Series Connection | Chassis Mount | 300 A | 20 µA | Standard Recovery >500ns | 200 mA | 150 °C | -55 °C | Standard |
GeneSiC Semiconductor | Three Tower | 800 V | 1.2 V | Three Tower | 1 Pair Series Connection | Chassis Mount | 300 A | 25 µA | Standard Recovery >500ns | 200 mA | 150 °C | -55 °C | Standard |
GeneSiC Semiconductor | Three Tower | 600 V | 1.2 V | Three Tower | 1 Pair Series Connection | Chassis Mount | 300 A | 25 µA | Standard Recovery >500ns | 200 mA | 150 °C | -55 °C | Standard |
GeneSiC Semiconductor | Three Tower | 600 V | 1.1 V | Three Tower | 1 Pair Series Connection | Chassis Mount | 300 A | 20 µA | Standard Recovery >500ns | 200 mA | 150 °C | -55 °C | Standard |
GeneSiC Semiconductor | Module | 1.1 V | 1 Pair Series Connection | Chassis Mount | 300 A | 20 µA | Standard Recovery >500ns | 200 mA | 150 °C | -55 °C | Standard | ||
GeneSiC Semiconductor | Three Tower | 800 V | 1.1 V | Three Tower | 1 Pair Series Connection | Chassis Mount | 300 A | 20 µA | Standard Recovery >500ns | 200 mA | 150 °C | -55 °C | Standard |