IC DRAM 2GBIT PARALLEL 60TWBGA
| Part | Memory Format | Memory Organization | Write Cycle Time - Word, Page | Clock Frequency | Operating Temperature [Max] | Operating Temperature [Min] | Memory Interface | Technology | Supplier Device Package | Package / Case | Access Time | Mounting Type | Memory Size | Voltage - Supply [Max] | Voltage - Supply [Min] | Memory Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | DRAM | 256M x 8 | 15 ns | 333 MHz | 85 °C | 0 °C | Parallel | SDRAM - DDR2 | 60-TWBGA (8x10.5) | 60-TFBGA | 450 ps | Surface Mount | 2 Gbit | 1.9 V | 1.7 V | Volatile |
ISSI, Integrated Silicon Solution Inc | DRAM | 256M x 8 | 15 ns | 400 MHz | 85 °C | 0 °C | Parallel | SDRAM - DDR2 | 60-TWBGA (8x10.5) | 60-TFBGA | 400 ps | Surface Mount | 2 Gbit | 1.9 V | 1.7 V | Volatile |
ISSI, Integrated Silicon Solution Inc | DRAM | 256M x 8 | 15 ns | 333 MHz | 85 °C | 0 °C | Parallel | SDRAM - DDR2 | 60-TWBGA (8x10.5) | 60-TFBGA | 450 ps | Surface Mount | 2 Gbit | 1.9 V | 1.7 V | Volatile |
ISSI, Integrated Silicon Solution Inc | DRAM | 256M x 8 | 15 ns | 400 MHz | 85 °C | -40 °C | Parallel | SDRAM - DDR2 | 60-TWBGA (8x10.5) | 60-TFBGA | 400 ps | Surface Mount | 2 Gbit | 1.9 V | 1.7 V | Volatile |
ISSI, Integrated Silicon Solution Inc | DRAM | 256M x 8 | 15 ns | 400 MHz | 85 °C | -40 °C | Parallel | SDRAM - DDR2 | 60-TWBGA (8x10.5) | 60-TFBGA | 400 ps | Surface Mount | 2 Gbit | 1.9 V | 1.7 V | Volatile |
ISSI, Integrated Silicon Solution Inc | DRAM | 256M x 8 | 15 ns | 333 MHz | 85 °C | -40 °C | Parallel | SDRAM - DDR2 | 60-TWBGA (8x10.5) | 60-TFBGA | 450 ps | Surface Mount | 2 Gbit | 1.9 V | 1.7 V | Volatile |