MOSFET 2P-CH 30V 9A 8SOIC
| Part | Technology | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs [Max] | Package / Case | Package / Case [y] | Package / Case [x] | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | FET Feature | Mounting Type | Supplier Device Package | Configuration | Drain to Source Voltage (Vdss) | Power - Max [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | MOSFET (Metal Oxide) | 9 A | 2600 pF | 19 mOhm | 8-SOIC | 3.9 mm | 0.154 in | 39 nC | 2.8 V | Logic Level Gate | Surface Mount | 8-SOIC | 2 P-Channel | 30 V | 2 W | -55 °C | 150 °C | ||
Alpha & Omega Semiconductor Inc. | MOSFET (Metal Oxide) | 6.9 A | 1100 pF | 8-SOIC | 3.9 mm | 0.154 in | 1.5 V | Surface Mount | 8-SOIC | 2 N-Channel (Dual) | 30 V | 1.9 W | -55 °C | 150 °C | 27 mOhm | 12 nC | |||
Alpha & Omega Semiconductor Inc. | MOSFET (Metal Oxide) | 5 A | 645 pF | 8-SOIC | 3.9 mm | 0.154 in | 1.3 V | Surface Mount | 8-SOIC | 2 P-Channel | 30 V | 2 W | -55 °C | 150 °C | 7 nC | ||||
Alpha & Omega Semiconductor Inc. | MOSFET (Metal Oxide) | 9 A | 2600 pF | 19 mOhm | 8-SOIC | 3.9 mm | 0.154 in | 39 nC | 2.8 V | Logic Level Gate | Surface Mount | 8-SOIC | 2 P-Channel | 30 V | 2 W | -55 °C | 150 °C |