IC FLASH 2MBIT SPI/QUAD 8SOP
| Part | Clock Frequency | Memory Interface | Voltage - Supply [Min] | Voltage - Supply [Max] | Supplier Device Package | Memory Organization [custom] | Memory Organization [custom] | Memory Size | Operating Temperature [Max] | Operating Temperature [Min] | Memory Format | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Package / Case | Package / Case [y] | Package / Case [x] | Mounting Type | Memory Type | Access Time | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited | 133 MHz | SPI - Quad I/O | 2.7 V | 3.6 V | 8-SOP | 256 K | 8 | 2 Gbit | 105 °C | -40 °C | FLASH | 140 µs | 4 ms | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | Non-Volatile | 7 ns | FLASH - NOR (SLC) |
GigaDevice Semiconductor (HK) Limited | 133 MHz | SPI - Quad I/O | 2.7 V | 3.6 V | 8-SOP | 256 K | 8 | 2 Gbit | 85 °C | -40 °C | FLASH | 70 µs | 2 ms | 8-SOIC | 5.3 mm | 0.209 " | Surface Mount | Non-Volatile | 7 ns | FLASH - NAND (SLC) |
GigaDevice Semiconductor (HK) Limited | 133 MHz | SPI - Quad I/O | 2.7 V | 3.6 V | 8-USON (3x2) | 256 K | 8 | 2 Gbit | 125 °C | -40 °C | FLASH | 140 µs | 4 ms | 8-XFDFN Exposed Pad | Surface Mount | Non-Volatile | 7 ns | FLASH - NOR (SLC) | ||
GigaDevice Semiconductor (HK) Limited | 120 MHz | SPI - Quad I/O | 2.7 V | 3.6 V | 8-SOP | 256 K | 8 | 2 Gbit | 85 °C | -40 °C | FLASH | 50 µs | 2.4 ms | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | Non-Volatile | FLASH - NOR | |
GigaDevice Semiconductor (HK) Limited | 133 MHz | SPI - Quad I/O | 2.7 V | 3.6 V | 8-USON (1.5x1.5) | 256 K | 8 | 2 Gbit | 85 °C | -40 °C | FLASH | 70 µs | 2 ms | 8-XFDFN Exposed Pad | Surface Mount | Non-Volatile | 7 ns | FLASH - NOR (SLC) | ||
GigaDevice Semiconductor (HK) Limited | 133 MHz | SPI - Quad I/O | 2.7 V | 3.6 V | 8-USON (3x2) | 256 K | 8 | 2 Gbit | 85 °C | -40 °C | FLASH | 70 µs | 2 ms | 8-XFDFN Exposed Pad | Surface Mount | Non-Volatile | 7 ns | FLASH - NOR (SLC) |