SCT3017ALHR Series

650V, 118A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Catalog

650V, 118A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Part	Mounting Type	Qualification	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Grade	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id
Rohm Semiconductor SCT3017ALHRC11	Through Hole	AEC-Q101	2884 pF	427 W	175 °C	172 nC	N-Channel	Automotive	650 V	TO-247-3	22.1 mOhm	118 A	TO-247N	18 V	5.6 V

Catalog

650V, 118A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Key Features

• Low on-resistance, Fast switching speed, Fast reverse recovery, Easy to parallel, Simple to drive, Pb-free lead plating ; RoHS compliant, Qualified to AEC-Q101

Description

AEC-Q101 qualified automotive grade product. SCT3017ALHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.