IC FLASH 1GBIT PAR 63FBGA
| Part | Package / Case | Memory Type | Operating Temperature [Max] | Operating Temperature [Min] | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Technology | Memory Format | Memory Size | Memory Interface | Supplier Device Package | Access Time | Mounting Type | Voltage - Supply [Max] | Voltage - Supply [Min] | Memory Organization | Package / Case [y] | Package / Case [y] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited | 63-VFBGA | Non-Volatile | 85 °C | -40 °C | 45 ns | 45 ns | FLASH - NAND (SLC) | FLASH | 1 Mbit | Parallel | 63-FBGA (9x11) | 30 ns | Surface Mount | 1.95 V | 1.7 V | 128 M | |||
GigaDevice Semiconductor (HK) Limited | 48-TFSOP | Non-Volatile | 85 °C | -40 °C | 20 ns | 600 µs | FLASH - NAND (SLC) | FLASH | 1 Mbit | ONFI | 48-TSOP I | 16 ns | Surface Mount | 1.95 V | 1.7 V | 128 M | 18.4 mm | 0.724 in | |
GigaDevice Semiconductor (HK) Limited | 63-VFBGA | Non-Volatile | 85 °C | -40 °C | 20 ns | 600 µs | FLASH - NAND (SLC) | FLASH | 1 Mbit | ONFI | 63-FBGA (9x11) | 16 ns | Surface Mount | 3.6 V | 2.7 V | 128 M | |||
GigaDevice Semiconductor (HK) Limited | |||||||||||||||||||
GigaDevice Semiconductor (HK) Limited | 48-TFSOP | Non-Volatile | FLASH - NAND | FLASH | 1 Mbit | 48-TSOP I | Surface Mount | 1.95 V | 1.7 V | 128 M | 0.173 in 4.4 mm |