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MOSFET N-CH 600V 15.8A TO3P
| Part | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Operating Temperature | Supplier Device Package | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Vgs (Max) | FET Type | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | Through Hole | 15.8 A | 38 nC | MOSFET (Metal Oxide) | 150 °C | TO-3P(N) | 130 W | 10 V | 190 mOhm | 1350 pF | SC-65-3 TO-3P-3 | 30 V | N-Channel | 600 V | 3.7 V |