MOSFET N-CH 60V 5A PW-MOLD
| Part | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Operating Temperature | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Vgs (Max) | Drain to Source Voltage (Vdss) | Technology | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 160 mOhm | 12 nC | Surface Mount | 150 °C | DPAK (2 Leads + Tab) SC-63 TO-252-3 | PW-MOLD | 20 W | N-Channel | 20 V | 60 V | MOSFET (Metal Oxide) | 4 V | 10 V | 5 A | 2 V | 370 pF |