Beta
⌘K
IGBT 650V 30A TO-220F
| Part | Reverse Recovery Time (trr) | Test Condition | Current - Collector Pulsed (Icm) | Voltage - Collector Emitter Breakdown (Max) | Td (on/off) @ 25°C | Td (on/off) @ 25°C | Power - Max [Max] | Vce(on) (Max) @ Vge, Ic | Mounting Type | Gate Charge | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Package / Case | Current - Collector (Ic) (Max) [Max] | Switching Energy | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Technology | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | FET Type | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | 263 ns | 15 A 15 V 20 Ohm 400 V | 45 A | 650 V | 10 ns | 68 ns | 30 W | 2.5 V | Through Hole | 25.4 nC | -55 °C | 150 °C | TO-220F | TO-220-3 Full Pack | 30 A | 190 µJ 280 µJ | ||||||||||
Alpha & Omega Semiconductor Inc. | Through Hole | -55 °C | 150 °C | TO-220F | TO-220-3 Full Pack | 3.8 V | 15 A | 27.8 W | MOSFET (Metal Oxide) | 30 V | 10 V | 600 V | N-Channel | 290 mOhm | 717 pF |