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MOSFET 2N-CH 200V 33A I4-PAC
| Part | Drain to Source Voltage (Vdss) | Power - Max [Max] | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Rds On (Max) @ Id, Vgs [Max] | Configuration | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 200 V | 125 W | 3700 pF | i4-Pac™-5 | 40 mOhm | 2 N-Channel (Dual) | ISOPLUS i4-PAC™ | 90 nC | Through Hole | 33 A | MOSFET (Metal Oxide) | -55 °C | 150 °C | 4.5 V |