DIODE MODULE GP 1.2KV 3TOWER
| Part | Package / Case | Mounting Type | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Speed | Speed | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Reverse Leakage @ Vr | Technology | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Diode Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Three Tower | Chassis Mount | Three Tower | 1.2 kV | Standard Recovery >500ns | 200 mA | 150 °C | -55 °C | 25 µA | Standard | 500 A | 1.2 V | 1 Pair Common Cathode |