UCC21737-Q1 Series

Automotive 10-A isolated single-channel gate driver for SiC/IGBT, active short-circuit protection

Catalog

Automotive 10-A isolated single-channel gate driver for SiC/IGBT, active short-circuit protection

Part	Mounting Type	Package / Case [x]	Package / Case	Package / Case [y]	Qualification	Voltage - Isolation	Operating Temperature [Max]	Operating Temperature [Min]	Current - Peak Output	Technology	Number of Channels	Supplier Device Package	Propagation Delay tpLH / tpHL (Max) [Max]	Common Mode Transient Immunity (Min) [Min]	Voltage - Output Supply [Max]	Voltage - Output Supply [Min]	Approval Agency	Pulse Width Distortion (Max) [Max]	Grade	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Current - Output High, Low [custom]	Current - Output High, Low [custom]
Texas Instruments UCC21737QDWRQ1	Surface Mount	0.295 in	16-SOIC	7.5 mm	AEC-Q100	5700 Vrms	125 °C	-40 °C	10 A	Capacitive Coupling	1	16-SOIC	130 ns	150 kV/µs	33 V	13 V	VDE	30 ns	Automotive	27 ns	33 ns	10 A	10 A

Catalog

Automotive 10-A isolated single-channel gate driver for SiC/IGBT, active short-circuit protection

Key Features

• 5.7kVRMS single channel isolated gate driverAEC-Q100 Qualified with the following results:Device temperature grade 1: -40°C to +125°C ambient operating temperature rangeFunctional Safety Quality-ManagedDocumentation available to aid functional safety system designSiC MOSFETs and IGBTs up to 2121Vpk33V maximum output drive voltage (VDD-VEE)±10A drive strength and split output150V/ns minimum CMTI270ns response time fast overcurrent protectionExternal active Miller clamp900mA soft turn-off when fault happensASC input on isolated side to turn on power switch during system faultAlarm FLT on overcurrent and reset from RST/ENFast enable/disable response on RST/ENRejects <40ns noise transient and pulse on input pins12V VDD UVLO and –3V VEE UVLO with power good on RDYInputs/outputs with over/under-shoot transient voltage immunity up to 5V130ns (maximum) propagation delay and 30ns (maximum) pulse/part skewSOIC-16 DW package with creepage and clearance distance > 8mmOperating junction temperature –40°C to 150°C5.7kVRMS single channel isolated gate driverAEC-Q100 Qualified with the following results:Device temperature grade 1: -40°C to +125°C ambient operating temperature rangeFunctional Safety Quality-ManagedDocumentation available to aid functional safety system designSiC MOSFETs and IGBTs up to 2121Vpk33V maximum output drive voltage (VDD-VEE)±10A drive strength and split output150V/ns minimum CMTI270ns response time fast overcurrent protectionExternal active Miller clamp900mA soft turn-off when fault happensASC input on isolated side to turn on power switch during system faultAlarm FLT on overcurrent and reset from RST/ENFast enable/disable response on RST/ENRejects <40ns noise transient and pulse on input pins12V VDD UVLO and –3V VEE UVLO with power good on RDYInputs/outputs with over/under-shoot transient voltage immunity up to 5V130ns (maximum) propagation delay and 30ns (maximum) pulse/part skewSOIC-16 DW package with creepage and clearance distance > 8mmOperating junction temperature –40°C to 150°C

Description

The UCC21737-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The device has up to ±10A peak source and sink currents. The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40 years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common-mode transient immunity (CMTI). The UCC21737-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The ASC feature can be utilized to force ON power switch during system failure events, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost. The UCC21737-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The device has up to ±10A peak source and sink currents. The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40 years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common-mode transient immunity (CMTI). The UCC21737-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The ASC feature can be utilized to force ON power switch during system failure events, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.