Beta
⌘K
DIODE SIL CARBIDE 1.2KV 1A TO252
| Part | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type | Current - Average Rectified (Io) | Speed | Current - Reverse Leakage @ Vr | Reverse Recovery Time (trr) | Supplier Device Package | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Package / Case | Capacitance @ Vr, F | Voltage - Forward (Vf) (Max) @ If | Technology | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 1.2 kV | Surface Mount | 1 A | No Recovery Time | 2 µA | 0 ns | TO-252 | 175 ░C | -55 C | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 69 pF | 1.8 V | SiC (Silicon Carbide) Schottky | |
GeneSiC Semiconductor | 1.2 kV | Surface Mount | No Recovery Time | 10 µA | 0 ns | DO-214AA | 175 ░C | -55 C | DO-214AA SMB | 69 pF | 1.8 V | SiC (Silicon Carbide) Schottky | SMB |