DIODE MOD SCHOTT 20V 200A 2TOWER
| Part | Package / Case | Diode Configuration | Current - Average Rectified (Io) (per Diode) | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Mounting Type | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Twin Tower | 1 Pair Common Anode | 200 A | 150 °C | -55 °C | 650 mV | 5 mA | Chassis Mount | Twin Tower | 200 mA 500 ns | 20 V | Schottky |
GeneSiC Semiconductor | Twin Tower | 1 Pair Common Cathode | 200 A | 150 °C | -55 °C | 650 mV | 5 mA | Chassis Mount | Twin Tower | 200 mA 500 ns | 20 V | Schottky |
GeneSiC Semiconductor | Twin Tower | 1 Pair Common Anode | 200 A | 150 °C | -55 °C | 580 mV | 3 mA | Chassis Mount | Twin Tower | 200 mA 500 ns | 20 V | Schottky |