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IC FLASH RAM 4GBIT ONFI 149WFBGA
| Part | Mounting Type | Memory Format | Memory Type | Access Time | Voltage - Supply [Min] | Voltage - Supply [Max] | Qualification | Operating Temperature [Max] | Operating Temperature [Min] | Memory Organization | Package / Case | Write Cycle Time - Word, Page | Memory Size | Grade | Clock Frequency | Memory Interface | Technology | Voltage - Supply |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology Inc. | Surface Mount | FLASH RAM | Non-Volatile Volatile | 25 ns | 1.06 V 1.7 V | 1.17 V 1.95 V | AEC-Q100 | 105 °C | -40 °C | 128 M 512 M | 149-WFBGA | 30 ns | 4 Gbit 4 Gbit | Automotive | 2.133 GHz | ONFI | DRAM - LPDDR4 FLASH - NAND (SLC) | |
Micron Technology Inc. | FLASH RAM | 128 M 512 M | 4 Gbit 4 Gbit | 1866 MHz | Parallel | |||||||||||||
Micron Technology Inc. | Surface Mount | FLASH RAM | Non-Volatile Volatile | 105 °C | -40 °C | 128 M 512 M | 149-WFBGA | 4 Gbit 4 Gbit | 1866 MHz | Parallel | DRAM - LPDDR4 FLASH - NAND | 1.8 V | ||||||
Micron Technology Inc. | FLASH RAM | 128 M 512 M | 4 Gbit 4 Gbit | 1866 MHz | Parallel | |||||||||||||
Micron Technology Inc. | Surface Mount | FLASH RAM | Non-Volatile Volatile | 25 ns | 1.06 V 1.7 V | 1.17 V 1.95 V | AEC-Q100 | 85 °C | -40 °C | 128 M 512 M | 149-WFBGA | 30 ns | 4 Gbit 4 Gbit | Automotive | 2.133 GHz | ONFI | DRAM - LPDDR4 FLASH - NAND (SLC) |