MOSFET N-CH 200V 3.8A TO252
| Part | Package / Case | Vgs (Max) | Power Dissipation (Max) | Technology | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 30 V | 2.1 W 25 W | MOSFET (Metal Oxide) | TO-252 (DPAK) | 3.8 A | 3.82 nC | -55 °C | 175 ░C | 215 pF | N-Channel | Surface Mount | 10 V | 200 V | 700 mOhm | |
Alpha & Omega Semiconductor Inc. | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 20 V | 3 W 50 W | MOSFET (Metal Oxide) | TO-252 (DPAK) | 50 A | 38 nC | -55 °C | 175 ░C | 2220 pF | N-Channel | Surface Mount | 4.5 V 10 V | 25 V | 6 mOhm | 3 V |