MOSFET N-CHANNEL 40V 58A DPAK
| Part | Mounting Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Package / Case | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Vgs(th) (Max) @ Id | Operating Temperature | Technology | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | Surface Mount | 40 V | 4670 pF | 20 V | 58 A | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 3.1 mOhm | 87 W | DPAK | 60 nC | N-Channel | 2.4 V | 175 °C | MOSFET (Metal Oxide) | 4.5 V 10 V |