P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Supplier Device Package | Power Dissipation (Max) [Max] | FET Type | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | Surface Mount | 10.2 nC | MOSFET (Metal Oxide) | 30 V | 1.5 A | 150 mOhm | SOT-23-6 | 330 pF | 4.5 V 10 V | -55 °C | 150 °C | 20 V | SOT-26 | 625 mW | P-Channel | 1 V |