Beta
⌘K
MOSFET N CH 600V 15.8A D2PAK
| Part | Rds On (Max) @ Id, Vgs | Technology | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Power Dissipation (Max) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Package / Case | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 190 mOhm | MOSFET (Metal Oxide) | 15.8 A | D2PAK | 38 nC | 10 V | Surface Mount | 130 W | 30 V | 1350 pF | N-Channel | 600 V | 3.7 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 150 °C |