TK15A60 Series

Catalog

MOSFET N-CH 600V 15A TO220SIS

Part	Mounting Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Operating Temperature	Rds On (Max) @ Id, Vgs	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]
Toshiba Semiconductor and Storage TK15A60U(STA4,Q,M)	Through Hole	40 W	950 pF	10 V	15 A	TO-220-3 Full Pack	600 V	N-Channel	30 V	17 nC	TO-220SIS	150 °C	300 mOhm	MOSFET (Metal Oxide)
Toshiba Semiconductor and Storage TK15A60D(STA4,Q,M)	Through Hole		2600 pF	10 V	15 A	TO-220-3 Full Pack	600 V	N-Channel	30 V		TO-220SIS	150 °C	370 mOhm	MOSFET (Metal Oxide)	45 nC	50 W