IC DRAM 512MBIT PAR 66TSOP
| Part | Package / Case [custom] | Package / Case | Package / Case [custom] | Access Time | Write Cycle Time - Word, Page | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Memory Type | Memory Format | Memory Organization | Clock Frequency | Memory Size | Memory Interface | Voltage - Supply [Max] | Voltage - Supply [Min] | Supplier Device Package | Supplier Device Package [y] | Supplier Device Package [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology Inc. | 0.4 in | 66-TSSOP | 0.4 in | 700 ps | 15 ns | 70 °C | 0 °C | Surface Mount | Volatile | DRAM | 128 M | 167 MHz | 64 MB | Parallel | 2.7 V | 2.3 V | 66-TSOP | ||
Micron Technology Inc. | 60-TFBGA | 750 ps | 15 ns | 70 °C | 0 °C | Surface Mount | Volatile | DRAM | 128 M | 133 MHz | 64 MB | Parallel | 2.7 V | 2.3 V | 60-FBGA | 12.5 | 10 | ||
Micron Technology Inc. | 60-TFBGA | 700 ps | 15 ns | 70 °C | 0 °C | Surface Mount | Volatile | DRAM | 128 M | 167 MHz | 64 MB | Parallel | 2.7 V | 2.3 V | 60-FBGA | 12.5 | 10 | ||
Micron Technology Inc. | 60-TFBGA | 700 ps | 15 ns | 70 °C | 0 °C | Surface Mount | Volatile | DRAM | 128 M | 167 MHz | 64 MB | Parallel | 2.7 V | 2.3 V | 60-FBGA | 12.5 | 10 |