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DIODE MODULE GP 600V 400A 3TOWER
| Part | Current - Reverse Leakage @ Vr | Diode Configuration | Supplier Device Package | Speed | Speed | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Average Rectified (Io) (per Diode) | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type | Package / Case | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 25 µA | 1 Pair Common Cathode | Three Tower | Standard Recovery >500ns | 200 mA | 1.2 V | 150 °C | -55 °C | 400 A | 600 V | Chassis Mount | Three Tower | Standard |