SCT4026DWA Series

750V, 51A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET

Catalog

750V, 51A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET

Part	Mounting Type	Vgs (Max) [Min]	Vgs (Max) [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature
Rohm Semiconductor SCT4026DWATL	Surface Mount	-4 V	21 V	SiC (Silicon Carbide Junction Transistor)	94 nC	750 V	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	18 V	2320 pF	34 mOhm	4.8 V	N-Channel	51 A	175 °C

Catalog

750V, 51A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET

Key Features

• Low on-resistance, Fast switching speed, Fast reverse recovery, Easy to parallel, Simple to drive, Pb-free lead plating ; RoHS compliant, Wide creepage distance = min.4.7mm

Description

SCT4026DWA is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.