BD2311NVX-LB Series

Single-channel Ultra-Fast Gate Driver for driving GaN Devices

Catalog

Single-channel Ultra-Fast Gate Driver for driving GaN Devices

Part	Voltage - Supply [Min]	Voltage - Supply [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Logic Voltage - VIL, VIH	Driven Configuration	Gate Type	Package / Case	Input Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Number of Drivers	Mounting Type	Channel Type	Supplier Device Package	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]
Rohm Semiconductor BD2311NVX-LBE2	4.5 V	5.5 V	125 °C	-40 °C	1.7 V 1.8 V	Low-Side	N-Channel MOSFET	6-UDFN Exposed Pad	Inverting	700 ps	650 ps	1	Surface Mount	Single	SSON06RX2020	7 A	5 A

Catalog

Single-channel Ultra-Fast Gate Driver for driving GaN Devices

Key Features

• Gate Driver Voltage Range 4.5V to 5.5V, Minimum Input Pulse Width 1.25ns (220pF load), Typical Rise Time 0.65ns (220pF load), Typical Fall Time 0.70ns (220pF load), Built-in Undervoltage Lockout (UVLO) between VCC and GND, Inverting and non-inverting inputs, Small Package SSON06RX2020

Description

This product is a rank product for the industrial equipment market. This is the best product for use in these applications. BD2311NVX-LB is a single gate driver capable of driving GaN HEMTs at Ultra-Fast with narrow pulses, which can contribute to the long-range and high accuracy of LiDAR. It can supply 5.4A output current in a small 6-pin SON package. As a protection function, the driver includes an Undervoltage Lockout(UVLO) between VCC and GND.