2N6042 Series

8.0 A, 100 V PNP Darlington Bipolar Power Transistor

Catalog

8.0 A, 100 V PNP Darlington Bipolar Power Transistor

Part	Transistor Type	Operating Temperature [Max]	Operating Temperature [Min]	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Current - Collector (Ic) (Max) [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor 2N6042G	PNP - Darlington	150 °C	-65 °C	1000 hFE	75 W	2 V	Through Hole	8 A	TO-220-3	20 µA	TO-220	100 V

Catalog

8.0 A, 100 V PNP Darlington Bipolar Power Transistor

Key Features

• High DC Current Gain -hFE= 2500 (Typ) @ IC= 4.0 Adc

• Collector-Emitter Sustaining Voltage - @ 100 mAdc -VCEO(sus)= 60 Vdc (Min) - 2N6040, 2N6043VCEO(sus)= 80 Vdc (Min) - 2N6041, 2N6044VCEO(sus)= 100 Vdc (Min) - 2N6042, 2N6045

• Low Collector-Emitter Saturation Voltage -VCE(sat)= 2.0 Vdc (Max) @ IC= 4.0 Adc - 2N6040,41, 2N6043,44VCE(sat)= 2.0 Vdc (Max) @ IC= 3.0 Adc - 2N6042, 2N6045

• Monolithic Construction with Built-In Base-Emitter Shunt Resistors

• Pb-Free Packages are Available

Description

The 8 A, 100 V NPN Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. 2N6040, 2N6042 (PNP); and 2N6043, 2N6045 (NPN) are complementary devices.