Catalog
60V P-Channel Enhancement Mode MOSFET
Description
AI
TN1.pdf
Beta
⌘K
60V P-Channel Enhancement Mode MOSFET
60V P-Channel Enhancement Mode MOSFET
| Part | Qualification | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Power Dissipation (Max) [Max] | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Supplier Device Package | Drain to Source Voltage (Vdss) | Grade | Vgs (Max) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | AEC-Q101 | Surface Mount | 2.9 nC | 219 pF | P-Channel | 625 mW | 900 mA | 4.5 V 10 V | MOSFET (Metal Oxide) | -55 °C | 150 °C | SC-59 SOT-23-3 TO-236-3 | SOT-23-3 | 60 V | Automotive | 20 V | 3 V |