UCC21739-Q1 Series

Automotive 3kVrms, ±10A single-channel isolated gate driver w/ isolated analog sensing for IGBT/SiC

Catalog

Automotive 3kVrms, ±10A single-channel isolated gate driver w/ isolated analog sensing for IGBT/SiC

Part	Number of Channels	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Technology	Package / Case [x]	Package / Case	Package / Case [y]	Common Mode Transient Immunity (Min) [Min]	Voltage - Output Supply [Max]	Voltage - Output Supply [Min]	Current - Output High, Low [custom]	Current - Output High, Low [custom]	Pulse Width Distortion (Max) [Max]	Voltage - Isolation	Mounting Type	Qualification	Approval Agency	Grade	Operating Temperature [Max]	Operating Temperature [Min]	Propagation Delay tpLH / tpHL (Max) [Max]	Current - Peak Output	Supplier Device Package
Texas Instruments UCC21739QDWQ1	1	27 ns	33 ns	Capacitive Coupling	0.295 in	16-SOIC	7.5 mm	150 kV/µs	33 V	13 V	10 A	10 A	30 ns	3000 VAC	Surface Mount	AEC-Q100	CQC CSA TUV UL VDE	Automotive	125 °C	-40 °C	130 ns	10 A	16-SOIC

Catalog

Automotive 3kVrms, ±10A single-channel isolated gate driver w/ isolated analog sensing for IGBT/SiC

Key Features

• 3kVRMS single channel isolated gate driverAEC-Q100 qualified for automotive applicationsDevice temperature grade 1: -40°C to +125°C ambient operating temperature rangeDevice HBM ESD classification level 3ADevice CDM ESD classification level C3SiC MOSFETs and IGBTs up to 900Vpk33V maximum output drive voltage (VDD-VEE)±10A drive strength and split output150V/ns minimum CMTI270ns response time fast overcurrent protectionExternal active miller clampInternal 2-level turn-off when fault happensIsolated analog sensor with PWM output forTemperature sensing with NTC, PTC or thermal diodeHigh voltage DC-Link or phase voltageAlarm FLT on over current and reset from RST/ENFast enable/disable response on RST/ENReject <40ns noise transient and pulse on input pins12V VDD UVLO with power good on RDYInputs/outputs with over/under-shoot transient voltage Immunity up to 5V130ns (maximum) propagation delay and 30ns (maximum) pulse/part skewSOIC-16 DW package with creepage and clearance distance > 8mmOperating junction temperature –40°C to 150°CSafety-related certifications :4242VPK isolation per DIN EN IEC 60747-17 (VDE 0884-17)3kVRMS single channel isolated gate driverAEC-Q100 qualified for automotive applicationsDevice temperature grade 1: -40°C to +125°C ambient operating temperature rangeDevice HBM ESD classification level 3ADevice CDM ESD classification level C3SiC MOSFETs and IGBTs up to 900Vpk33V maximum output drive voltage (VDD-VEE)±10A drive strength and split output150V/ns minimum CMTI270ns response time fast overcurrent protectionExternal active miller clampInternal 2-level turn-off when fault happensIsolated analog sensor with PWM output forTemperature sensing with NTC, PTC or thermal diodeHigh voltage DC-Link or phase voltageAlarm FLT on over current and reset from RST/ENFast enable/disable response on RST/ENReject <40ns noise transient and pulse on input pins12V VDD UVLO with power good on RDYInputs/outputs with over/under-shoot transient voltage Immunity up to 5V130ns (maximum) propagation delay and 30ns (maximum) pulse/part skewSOIC-16 DW package with creepage and clearance distance > 8mmOperating junction temperature –40°C to 150°CSafety-related certifications :4242VPK isolation per DIN EN IEC 60747-17 (VDE 0884-17)

Description

The UCC21739-Q1 is a galvanic isolated single channel gate drivers designed for SiC MOSFETs and IGBTs up to 900V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21739-Q1 has up to ±10A peak source and sink current. The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 636VRMS working voltage, 6kVPK surge immunity basic isolation with longer than 40 years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI). The UCC21739-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost. The UCC21739-Q1 is a galvanic isolated single channel gate drivers designed for SiC MOSFETs and IGBTs up to 900V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21739-Q1 has up to ±10A peak source and sink current. The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 636VRMS working voltage, 6kVPK surge immunity basic isolation with longer than 40 years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI). The UCC21739-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.