DIODE GEN PURPOSE DO-204AL
| Part | Mounting Type | Technology | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Voltage - Forward (Vf) (Max) @ If | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr | Current - Average Rectified (Io) | Supplier Device Package | Package / Case | Speed | Speed | Capacitance @ Vr, F | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | Through Hole | |||||||||||||
Vishay General Semiconductor - Diodes Division | Through Hole | Standard | -50 °C | 150 °C | 1.1 V | 800 V | 5 µA | 1 A | DO-204AL (DO-41) | Axial DO-204AL DO-41 | Standard Recovery >500ns | 200 mA | 15 pF | |
Vishay General Semiconductor - Diodes Division | Through Hole | Standard | -50 °C | 150 °C | 1.1 V | 800 V | 5 µA | 1 A | DO-204AL (DO-41) | Axial DO-204AL DO-41 | Standard Recovery >500ns | 200 mA | 15 pF | |
Vishay General Semiconductor - Diodes Division | ||||||||||||||
Vishay General Semiconductor - Diodes Division | Through Hole | Standard | -50 °C | 150 °C | 1.1 V | 800 V | 5 µA | 1 A | DO-204AL (DO-41) | Axial DO-204AL DO-41 | Standard Recovery >500ns | 200 mA | 15 pF | |
Vishay General Semiconductor - Diodes Division | Through Hole | Standard | -65 C | 175 ░C | 1.1 V | 800 V | 5 µA | 1 A | DO-204AL (DO-41) | Axial DO-204AL DO-41 | Standard Recovery >500ns | 200 mA | 8 pF | 2 µs |