DIODE MODULE GP 1.4KV 3TOWER
| Part | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Supplier Device Package | Speed | Speed | Mounting Type | Package / Case | Voltage - Forward (Vf) (Max) @ If [Max] | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr | Current - Average Rectified (Io) (per Diode) | Diode Configuration | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 150 °C | -55 °C | Three Tower | Standard Recovery >500ns | 200 mA | Chassis Mount | Three Tower | 1.1 V | 1400 V | 10 µA | 100 A | 1 Pair Series Connection | Standard |
GeneSiC Semiconductor | 150 °C | -55 °C | Three Tower | Standard Recovery >500ns | 200 mA | Chassis Mount | Three Tower | 1.1 V | 1000 V | 10 çA | 100 A | 1 Pair Series Connection | Standard |
GeneSiC Semiconductor | 150 °C | -55 °C | Three Tower | Standard Recovery >500ns | 200 mA | Chassis Mount | Three Tower | 1.1 V | 600 V | 10 µA | 100 A | 1 Pair Series Connection | Standard |
GeneSiC Semiconductor | 150 °C | -55 °C | Three Tower | Standard Recovery >500ns | 200 mA | Chassis Mount | Three Tower | 1.1 V | 10 µA | 100 A | 1 Pair Series Connection | Standard | |
GeneSiC Semiconductor | 150 °C | -55 °C | Three Tower | Standard Recovery >500ns | 200 mA | Chassis Mount | Three Tower | 1.1 V | 1.2 kV | 10 µA | 100 A | 1 Pair Series Connection | Standard |