DIODE MODULE GP 1.6KV 3TOWER
| Part | Mounting Type | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Package / Case | Supplier Device Package | Current - Average Rectified (Io) (per Diode) | Current - Reverse Leakage @ Vr | Speed | Speed | Diode Configuration | Technology | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Chassis Mount | 150 °C | -55 °C | Three Tower | Three Tower | 250 A | 15 µA | Standard Recovery >500ns | 200 mA | 1 Pair Common Cathode | Standard | 1.2 V |