TJ50S06 Series

Catalog

MOSFET P-CH 60V 50A DPAK

Part	Package / Case	Rds On (Max) @ Id, Vgs	Vgs (Max) [Min]	Vgs (Max) [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type	Operating Temperature	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C
Toshiba Semiconductor and Storage TJ50S06M3L(T6L1,NQ	DPAK (2 Leads + Tab) SC-63 TO-252-3	13.8 mOhm	-20 V	10 V	90 W	6290 pF	MOSFET (Metal Oxide)	Surface Mount	175 °C	60 V	6 V 10 V	DPAK+	P-Channel	3 V	124 nC	50 A
Toshiba Semiconductor and Storage TJ50S06M3L,LXHQ	DPAK (2 Leads + Tab) SC-63 TO-252-3	13.8 mOhm	-20 V	10 V	90 W	6290 pF	MOSFET (Metal Oxide)	Surface Mount	175 °C	60 V	6 V 10 V	DPAK+	P-Channel	3 V	124 nC	50 A