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MOSFET N-CH 650V 15A 5DFN
| Part | Operating Temperature | Technology | FET Type | Vgs(th) (Max) @ Id | Mounting Type | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 150 °C | MOSFET (Metal Oxide) | N-Channel | 4 V | Surface Mount | 30 V | 25 nC | 4-VSFN Exposed Pad | 10 V | 1370 pF | 4-DFN-EP (8x8) | 650 V | 15 A | 210 mOhm | 130 W |