IC DRAM 1GBIT PARALLEL 60TWBGA
| Part | Package / Case | Memory Type | Memory Interface | Voltage - Supply [Max] | Voltage - Supply [Min] | Technology | Memory Organization | Clock Frequency | Write Cycle Time - Word, Page | Memory Size | Access Time | Mounting Type | Memory Format | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | 60-TFBGA | Volatile | Parallel | 1.95 V | 1.7 V | SDRAM - Mobile LPDDR | 64 M | 166 MHz | 15 ns | 1 Mbit | 5 ns | Surface Mount | DRAM | 70 °C | 0 °C | 60-TWBGA (8x10) |
ISSI, Integrated Silicon Solution Inc | 60-TFBGA | Volatile | Parallel | 1.95 V | 1.7 V | SDRAM - Mobile LPDDR | 64 M | 200 MHz | 15 ns | 1 Mbit | 5 ns | Surface Mount | DRAM | 70 °C | 0 °C | 60-TWBGA (8x10) |
ISSI, Integrated Silicon Solution Inc | 60-TFBGA | Volatile | Parallel | 1.95 V | 1.7 V | SDRAM - Mobile LPDDR | 64 M | 200 MHz | 15 ns | 1 Mbit | 5 ns | Surface Mount | DRAM | 85 °C | -40 °C | 60-TWBGA (8x10) |
ISSI, Integrated Silicon Solution Inc | 60-TFBGA | Volatile | Parallel | 1.95 V | 1.7 V | SDRAM - Mobile LPDDR | 64 M | 166 MHz | 15 ns | 1 Mbit | 5 ns | Surface Mount | DRAM | 85 °C | -40 °C | 60-TWBGA (8x10) |
ISSI, Integrated Silicon Solution Inc | 60-TFBGA | Volatile | Parallel | 1.95 V | 1.7 V | SDRAM - Mobile LPDDR | 64 M | 200 MHz | 15 ns | 1 Mbit | 5 ns | Surface Mount | DRAM | 85 °C | -40 °C | 60-TWBGA (8x10) |