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MOSFET N-CH 600V 4A TO262
| Part | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | FET Type | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Technology | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | 263 pF | Through Hole | N-Channel | I2PAK TO-262-3 Long Leads TO-262AA | 10 V | 30 V | -55 °C | 150 °C | 83 W | MOSFET (Metal Oxide) | 900 mOhm | 4.1 V | TO-262 | 4 A | 600 V | 6 nC |