IC DRAM 64MBIT PAR 54TSOP II
| Part | Write Cycle Time - Word, Page | Memory Interface | Access Time | Memory Format | Mounting Type | Memory Type | Memory Organization | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Voltage - Supply [Max] | Voltage - Supply [Min] | Clock Frequency | Supplier Device Package | Memory Size |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology Inc. | 15 ns | Parallel | 5.4 ns | DRAM | Surface Mount | Volatile | 8M x 8 | SDRAM | 70 °C | 0 °C | 3.6 V | 3 V | 133 MHz | 54-TSOP II | 64 Gbit |
Micron Technology Inc. | 14 ns | Parallel | 5.4 ns | DRAM | Surface Mount | Volatile | 8M x 8 | SDRAM | 70 °C | 0 °C | 3.6 V | 3 V | 133 MHz | 54-TSOP II | 64 Gbit |
Micron Technology Inc. | 15 ns | Parallel | 5.4 ns | DRAM | Surface Mount | Volatile | 8M x 8 | SDRAM | 70 °C | 0 °C | 3.6 V | 3 V | 133 MHz | 54-TSOP II | 64 Gbit |
Micron Technology Inc. | 15 ns | Parallel | 5.4 ns | DRAM | Surface Mount | Volatile | 8M x 8 | SDRAM | 85 °C | -40 °C | 3.6 V | 3 V | 133 MHz | 54-TSOP II | 64 Gbit |
Micron Technology Inc. | 15 ns | Parallel | 5.4 ns | DRAM | Surface Mount | Volatile | 8M x 8 | SDRAM | 85 °C | -40 °C | 3.6 V | 3 V | 133 MHz | 54-TSOP II | 64 Gbit |
Micron Technology Inc. | 15 ns | Parallel | 5.4 ns | DRAM | Surface Mount | Volatile | 8M x 8 | SDRAM | 70 °C | 0 °C | 3.6 V | 3 V | 133 MHz | 54-TSOP II | 64 Gbit |
Micron Technology Inc. | 15 ns | Parallel | 5.4 ns | DRAM | Surface Mount | Volatile | 8M x 8 | SDRAM | 70 °C | 0 °C | 3.6 V | 3 V | 133 MHz | 54-TSOP II | 64 Gbit |