2N6034 Series

4.0 A, 40 V PNP Darlington Bipolar Power Transistor

Catalog

4.0 A, 40 V PNP Darlington Bipolar Power Transistor

Part	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Transistor Type	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]
ON Semiconductor 2N6034	3 V	750	Through Hole	4 A	TO-126-3 TO-225AA	40 V	100 µA	TO-126	PNP - Darlington	40 W	150 °C	-65 °C

4.0 A, 40 V PNP Darlington Bipolar Power Transistor

• High DC Current Gain -hFE= 2000 (Typ) @ IC= 2.0 Adc

• Collector-Emitter Sustaining Voltage - @ 100 mAdcVCEO(sus)= 60 Vdc (Min) - 2N6035, 2N6038VCEO(sus)= 80 Vdc (Min) - 2N6036, 2N6039

• Forward Biased Second Breakdown Current CapabilityIS/b= 1.5 Adc @ 25 Vdc

• Monolithic Construction with Built-in Base-EmitterResistors to Limit Leakage Multiplication

• Space-Saving High Performance-to-Cost RatioTO-225AA Plastic Package

• Pb-Free Packages are Available

The Power 4 A, 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.