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MOSFET N-CH 550V 7.5A TO220SIS
| Part | FET Type | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Technology | Vgs (Max) | Power Dissipation (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | N-Channel | Through Hole | 16 nC | 550 V | 1.07 Ohm | 7.5 A | 10 V | TO-220SIS | TO-220-3 Full Pack | 800 pF | MOSFET (Metal Oxide) | 30 V | 40 W | 150 °C |