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MOSFET N-CH 120V 72A TO220SIS
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | FET Type | Supplier Device Package | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Technology | Package / Case | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 130 nC | Through Hole | 8100 pF | 150 °C | 72 A | 120 V | N-Channel | TO-220SIS | 45 W | 4.5 mOhm | 10 V | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 20 V |