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MOSFET 2N-CH 60V 3.3A 8SOIC
| Part | Operating Temperature [Min] | Operating Temperature [Max] | FET Feature | Rds On (Max) @ Id, Vgs | Technology | Supplier Device Package | Power - Max [Max] | Mounting Type | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Configuration | Package / Case | Package / Case [y] | Package / Case [x] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | -55 °C | 150 °C | Logic Level Gate | 100 mOhm | MOSFET (Metal Oxide) | 8-SOIC | 2 W | Surface Mount | 1 V | 30 nC | 2 N-Channel (Dual) | 8-SOIC | 3.9 mm | 0.154 in | 3.3 A | 60 V |