MOSFET P-CH 30V 2A TSMT6
| Part | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id [Max] | Mounting Type | Technology | Power Dissipation (Max) | Vgs (Max) | Operating Temperature | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Current - Continuous Drain (Id) @ 25°C | FET Type | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 30 V | 2.5 V | Surface Mount | MOSFET (Metal Oxide) | 1.25 W | 20 V | 150 °C | TSMT6 (SC-95) | 230 pF | SOT-23-6 Thin TSOT-23-6 | 4 V | 10 V | 2 A | P-Channel | 160 mOhm | 3.2 nC |