Beta
⌘K
MOSFET N-CH 650V 18A TO220SIS
| Part | Technology | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Vgs (Max) | Package / Case | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | Through Hole | 29 nC | TO-220SIS | 4 V | 650 V | 30 V | TO-220-3 Full Pack | 40 W | 18 A | N-Channel | 1635 pF | 150 °C | 10 V |