ZXMP7A17GQ Series

70V P-Channel Enhancement Mode MOSFET

Catalog

70V P-Channel Enhancement Mode MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Technology	Supplier Device Package	Vgs(th) (Max) @ Id	Grade	Qualification	Power Dissipation (Max) [Max]
Diodes Inc ZXMP7A17KTC	635 pF	70 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	2.11 W	160 mOhm	-55 °C	150 °C	20 V	Surface Mount	18 nC	P-Channel	3.8 A	4.5 V 10 V	MOSFET (Metal Oxide)	TO-252-3	1 V
Diodes Inc ZXMP7A17KQTC	635 pF	70 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	2.11 W	160 mOhm	-55 °C	150 °C	20 V	Surface Mount	18 nC	P-Channel	3.8 A	4.5 V 10 V	MOSFET (Metal Oxide)	TO-252-3	1 V
Diodes Inc ZXMP7A17GQTC	635 pF	70 V	TO-261-4 TO-261AA		160 mOhm	-55 °C	150 °C	20 V	Surface Mount	18 nC	P-Channel	2.6 A	4.5 V 10 V	MOSFET (Metal Oxide)	SOT-223-3	1 V	Automotive	AEC-Q101	2 W

Catalog

70V P-Channel Enhancement Mode MOSFET

Key Features

• 100% Unclamped Inductive Switch (UIS) Test in Production

• Low On-Resistance

• Fast Switching Speed

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The ZXMP7A17GQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This new generation of trench MOSFETs utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.