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MOSFET N-CH 600V 20A TO3P
| Part | Technology | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Rds On (Max) @ Id, Vgs | Operating Temperature | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Package / Case | Vgs (Max) | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | 20 A | Through Hole | 1470 pF | TO-3P(N) | 190 mOhm | 150 °C | 600 V | 27 nC | N-Channel | SC-65-3 TO-3P-3 | 30 V | 190 W | 10 V |