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DIODE MODULE GP 1KV 600A 3TOWER
| Part | Diode Configuration | Current - Average Rectified (Io) (per Diode) | Speed | Speed | Current - Reverse Leakage @ Vr | Mounting Type | Supplier Device Package | Voltage - Forward (Vf) (Max) @ If | Package / Case | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Voltage - DC Reverse (Vr) (Max) [Max] | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 1 Pair Common Cathode | 600 A | Standard Recovery >500ns | 200 mA | 25 µA | Chassis Mount | Three Tower | 1.2 V | 3-SMD Module | 150 °C | -55 °C | 1000 V | Standard |