Catalog
Low voltage NPN power Darlington transistor
Description
AI
The device is manufactured in planar technology with "base island" layout and monolithic Darlington configuration.
Low voltage NPN power Darlington transistor
Low voltage NPN power Darlington transistor
| Part | Current - Collector Cutoff (Max) [Max] | Vce Saturation (Max) @ Ib, Ic [Max] | Mounting Type | Package / Case | Power - Max [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce | Current - Collector (Ic) (Max) [Max] | Supplier Device Package | Operating Temperature | Voltage - Collector Emitter Breakdown (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 100 µA | 1.3 V | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 70 W | 750 hFE | 12 A | TO-263 (D2PAK) | 150 °C | 100 V |
STMicroelectronics | 100 µA | 1.3 V | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 70 W | 750 hFE | 12 A | TO-263 (D2PAK) | 150 °C | 100 V |