RJ1P12 Series

Catalog

MOSFET, N-CH, 120A, 100V, TO-263AB

Part	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Operating Temperature	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Mounting Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Technology
Rohm Semiconductor RJ1P12BBDTLL	80 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	150 °C	N-Channel	100 V	4 V	178 W	Surface Mount	20 V	5.8 mOhm	120 A	4170 pF	6 V 10 V	MOSFET (Metal Oxide)